Part of the DoW SBIR/STTR FY27 Release 2 topic list. Browse all 83 topics by industry or service.
Topic OSW27BZ02-NV004 from the DoW SBIR 2027 BAA, Release 2. Pre-release now; proposals due January 6, 2027, 12:00 PM ET.
Quick answer
OSW27BZ02-NV004 is an Office of the Secretary of War SBIR topic seeking epsilon-near-zero (ENZ) optical modulators that stay stable under extreme conditions such as high temperature and intense laser or UV irradiation, with ultrafast modulation in the mid-wave infrared. It is a Phase I topic with a Phase II follow-on. Proposals are due January 6, 2027, 12:00 PM ET.
Solicitation at a glance
- Topic number: OSW27BZ02-NV004
- Official title: Robust and resilient optical modulators for extreme environment applications
- Agency: Office of the Secretary of War
- Program: SBIR (DoW SBIR 2027 BAA, Release 2)
- Award type: Phase I (see topic text for Phase II)
- Award amount: Not yet posted. OSW component instructions not available in DSIP as of Nov 5, 2026.
- CMMC level: Level 1
- ITAR: No
- Technology areas: Air Platform, Battlespace, Electronics, Ground Sea, Materials, Sensors, Space Platforms, Weapons
- Pre-release (direct TPOC contact allowed): November 4 to December 2, 2026, 8:00 AM ET
- Opens in DSIP: December 2, 2026, 8:00 AM ET
- Proposals due: January 6, 2027, 12:00 PM ET
- Official source: DSIP Topics app (search OSW27BZ02-NV004)
BW&CO's take
What the Office of the Secretary of War wants
The Government wants ENZ materials and modulator devices that keep working in air at temperatures up to 800C or under laser irradiation up to 10 MW/cm2, and that switch light quickly in the 3 to 5 micron MWIR window. Phase I calls for complete characterization of a new ENZ material and demonstration of device structures such as metal-insulator-metal or waveguide designs at MWIR, using electrical or optical tuning. Phase II fabricates a robust modulator with electro-optic phase and amplitude modulation in a single ENZ waveguide device, with key metrics of throughput, optical loss, operating voltage, bandwidth, and robustness to heat and laser exposure.
Who is a good fit
- Prior growth and characterization of ENZ materials such as transparent conducting oxides, including high-temperature stability data in air
- Design and fabrication of plasmonic or waveguide electro-optic modulators, particularly in the mid-infrared
- Ultrafast optical characterization capability, such as pump-probe measurement of switching speed
- A credible case for why a new material or fabrication approach improves on past ENZ techniques
Watch-outs
- Phase I scope is heavy: complete material characterization plus demonstration of ENZ device structures at MWIR under high temperature or intense laser irradiation. Show you can reach these conditions with existing equipment.
- The topic seeks ENZ modulators made by new approaches that improve on past techniques, and says it would be useful to explain why any new material or approach is promising.
- The Phase II device must combine electro-optic phase and amplitude modulation in a single ENZ waveguide structure, which is a demanding integration target.
- The topic requires CMMC Level 1. It is not marked as ITAR-restricted in the topic metadata.
Think your company fits OSW27BZ02-NV004? Talk with BW&CO before the January 6 deadline.
Plan Your OSW27BZ02-NV004 Submission
Official topic text (verbatim from DSIP)
The text in this section is copied word for word from the official DSIP topic as published on November 4, 2026. DSIP is the official source and topics can be amended. Always confirm the current version at dodsbirsttr.mil before you submit. Our commentary above is BW&CO's interpretation, not Government guidance.
Title
Robust and resilient optical modulators for extreme environment applications
Objective
The objective of this project is to develop and demonstrate Epsilon-Near-Zero (ENZ)-based optical modulating devices that can be resilient/robust to extreme environments such as high temperatures and strong UV irradiation.
Description
This topic solicits new ENZ based optical modulators that can be manufactured by new approaches to improve the techniques explored in the past. If a new material (or approach) is proposed, it would be useful if the proposers discussed why this new material (or approach) is promising. Offerors must address the high temperature stability and durability of ENZ materials in air under either high temperature (up to 800C) and demonstrate ENZ-based modulation device structures, such as metal-insulator-metal or waveguide structure, at MWIR regime. Furthermore, the proposers must address optical light modulation by utilizing electrical or optical tuning, and demonstrate ultrafast switching capability with high-speed, power efficient, and compact optical modulator designs. The successful team will design and demonstrate proof-of-concept devices under high temperatures.
Phase I
Phase I seeks complete characterization data of new ENZ material that can be used in extreme environments such as high temperatures and high UV laser irradiation with an ultrafast optical modulation in the MWIR window (3-5 um). Offerors must address the high temperature stability and durability of ENZ materials in air under either high temperature (up to 800C) or intense laser irradiation up to 10 MWcm-2 and demonstrate ENZ-based modulation device structures, such as metal-insulator-metal or waveguide structure, at MWIR regime. If this Phase I is successful, plan to manufacture ENZ-based optical modulators operatable in the near-IR to mid-IR windows in this extreme environment. Documentation may comprise technical reports, peer-reviewed publications, measured data, and design artifacts sufficient to substantiate the scientific, technical, and commercial merit required to enter Phase II.
Phase II
Awardee(s) will develop, fabricate, and demonstrate a robust and resilient optical modulator based on ENZ material for improved image processing, refining system requirements in coordination with the topic’s principal investigator. The effort will include: electro-optic phase and amplitude modulation in single device in ENZ material-based waveguide structure at MWIR; optical field confinement effect occurring in near ENZ wavelength that can be tuned by electrically or optically. Key metrics include throughput, low optical losses, low operating voltages, bandwidth, and robustness to high temperatures and laser irradiations.
Phase III Dual Use Applications
Energy-efficient, ultrafast, and compact devices of this type have broad defense and commercial applications. Military uses include compact thermal-imaging systems, RF-independent communication, payload, and deployable platforms where SWaP-C reduction is critical. Commercial applications include high temperature energy harvesting systems, ultrafast switching modulators, and all-optical switching devices. Devices meeting the desired criteria would provide a considerable improvement over existing solutions and find widespread application in these areas.
References
M. Shabaninezhad, H. Mehrvar, E. Bernier, L. Ramunno, and P. Berini, "Plasmonic electro-optic modulators based on epsilon-near-zero materials: comparing the classical drift-diffusion and Schrödinger-Poisson coupling models," Opt. Express 33, 4474-4490 (2025). https://doi.org/10.1364/OE.544216
A. Jahid et al, “A contemporary survey on free space optical communication: Potentials, technical challenges, recent advances and research direction, Journal of Network and Computer Applications 200, (2022) 103311. https://doi.org/10.1016/j.jnca.2021.103311.
H. Jiang et al, “Broad-Band Ultrafast All-Optical Switching Based on Enhanced Nonlinear Absorption in Corrugated Indium Tin Oxide Films,” ACS Nano 16, 12878 (2022). https://doi.org/10.1021/acsnano.2c05139
Keywords
Robust and resilient nanophotonic devices, Epsilon Near Zero (ENZ) materials, Transparent conducting oxides, Mid-wave infrared (MWIR), Advanced materials, Electro-optic modulator, Ultrafast switching devices, Extreme environment.
Frequently asked questions
What is OSW27BZ02-NV004?
It is an Office of the Secretary of War SBIR topic, Robust and resilient optical modulators for extreme environment applications, seeking Epsilon-Near-Zero (ENZ) optical modulating devices that tolerate high temperatures and strong irradiation while modulating light quickly in the MWIR.
When is OSW27BZ02-NV004 due?
Proposals are due January 6, 2027, 12:00 PM ET. DSIP pre-release began November 4, 2026, and direct contact with the topic authors is allowed only until the topic opens on December 2, 2026, 8:00 AM ET.
Is this a Phase I or Direct-to-Phase II topic?
The topic describes a Phase I effort (characterizing a new ENZ material and demonstrating device structures at MWIR) followed by a Phase II effort to develop, fabricate, and demonstrate a robust ENZ-based modulator. It does not state that it is Direct-to-Phase II.
What operating conditions must the material handle?
Offerors must address high temperature stability and durability of ENZ materials in air at up to 800C or under intense laser irradiation up to 10 MW/cm2, with ultrafast optical modulation in the 3 to 5 micron MWIR window.