DAF26BZ02-DV012 — Bulk Growth of InAsP Crystal
Award Maximum: $2,000,000 Period of Performance: 24 months Phase Type: Direct-to-Phase-II (D2P2)
OBJECTIVE: The overall goal of the R&D effort is to develop high optical quality compositionally uniform wafers of the ternary semiconductor alloy InAsP with different alloy compositions. The wafer sizes should be approximately 20 to 25 mm in cross section dimensions, and above 1 mm in thickness.
DESCRIPTION: Infrared detectors, especially for the short wave infrared spectral range are fabricated by growing semiconductor alloy thin films having different compositions on high quality substrates. The substrate needs to be of high electronic quality, i.e., it must be of high compositional uniformity, possess very few defects, and ideally be lattice matched with the thin films. Moreover, the optical quality of the substrate needs to be high, i.e., they must transmit light at the desired wavelength range with as little absorption or scattering as possible. Ternary alloy semiconductors, due to their flexible optical transmission ranges, are ideal for infrared detector applications. However, there are no commercial suppliers for bulk ternary alloy InAsP and it is important for the Air Force to have a domestic supply source for such a material.
PHASE I: As this is a Direct-to-Phase-II (D2P2) topic, no Phase I awards will be made as a result of this topic. To qualify for this D2P2 topic, the Air Force expects the applicants to demonstrate feasibility by means of a prior "Phase I-type" effort that does not constitute work undertaken as part of a prior or ongoing SBIR/STTR funding agreement. Applicants should provide documentation demonstrating experience in growth of bulk ternary alloy crystals and a clear understanding of the challenges faced in meeting the size, uniformity and optical quality requirements.
PHASE II: At the end of the Phase II Period of Performance, the applicant should be able to deliver wafers of the ternary semiconductor alloy in 20 - 25 mm in cross section dimensions, and above 1 mm in thickness with reasonable yield rate, consistently providing several high optical quality, crack and twin-free wafers from each crystal boule grown. The key success criteria for the effort are the high degree of compositional uniformity over the entire wafer, lack of appreciable amounts of defects and achievement of desired band gap energy by the tuning of the alloy composition in the delivered crystals. During the period of performance, means to prevent alloy segregation during crystal growth need to be developed and the challenges of compositional uniformity, high optical quality, minimal or imperceptible crystal defects, large size and high yield must be addressed. A measure of the optical quality is the visual image quality of a high-resolution bar-target observed through the wafer at the appropriate wavelength and magnification in an infrared camera.
PHASE III DUAL USE APPLICATIONS: The awardee will pursue commercialization of the various technologies developed in Phase II for transitioning expanded mission capability to a broad range of potential government and civilian users and alternate mission applications. Direct access with end-users and government customers will be provided with opportunities to receive Phase III awards for providing the government additional research & development, or direct procurement of products and services developed in coordination with the program.